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| PolarHTTM Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet IXTQ 82N25P IXTT 82N25P IXTK 82N25P RDS(on) VDSS ID25 = 250 V = 82 A = 35 m TO-264 (IXTK) Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-264 TO-268 TC = 25C External lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Maximum Ratings 250 250 20 82 75 250 60 40 1.0 10 500 -55 ... +150 150 -55 ... +150 300 V V V A A A A mJ J V/ns W C C C C G = Gate S = Source D = Drain TAB = Drain G D S (TAB) TO-3P (IXTQ) G D S (TAB) TO-268 (IXTT) G S D (TAB) 1.13/10 Nm/lb.in. 5.5 10 5.0 g g g Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C Characteristic Values Min. Typ. Max. 250 2.5 5.0 100 25 250 35 V V nA A A m VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending. DS99121B(04/04) (c) 2004 IXYS All rights reserved IXTK 82N25P IXTQ 82N25P IXTT 82N25P Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 30 52 4800 VGS = 0 V, VDS = 25 V, f = 1 MHz 900 210 29 VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 4 (External) 20 78 22 142 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 32 74 S pF pF pF ns ns ns ns nC nC nC 0.25 K/W TO-3P TO-264 0.21 0.15 K/W K/W TO-3P Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCH VDS= 10 V; ID = 0.5 ID25, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 82 250 1.5 200 2.0 A A V ns C TO-268 Outline IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A -di/dt = 100 A/s VR = 100 V TO-264 AA Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXTK 82N25P IXTQ 82N25P IXTT 82N25P Fig. 1. Output Characteristics @ 25C 90 80 70 VGS = 10V 9V 8V 200 180 160 140 VGS = 10V 9V Fig. 2. Extended Output Characteristics @ 25C ID - Amperes ID - Amperes 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 6V 7V 120 100 80 60 40 20 0 0 2 4 6 8 10 12 8V 7V 6V 14 16 18 20 V DS - Volts Fig. 3. Output Characteristics @ 125C 90 80 70 VGS = 10V 9V 8V 2.6 2.4 2.2 VGS = 10V V DS - Volts Fig. 4. RDS(on) Norm alized to ID25 Value vs. Junction Tem perature ID - Amperes 60 50 40 30 20 10 0 0 1 2 3 5V 4 5 6 7 8 7V RDS(on) - Normalized 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 I D = 82A I D = 41A 6V V DS - Volts -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature Fig. 5. RDS(on) Norm alized to 3.7 3.4 3.1 VGS = 10V ID25 Value vs. ID 90 80 70 RDS(on) - Normalized 2.8 2.5 2.2 1.9 1.6 1.3 1 0.7 0 20 40 60 TJ = 25C TJ = 125C ID - Amperes 60 50 40 30 20 10 0 ID - Amperes 80 100 120 140 160 180 200 -50 -25 TC - Degrees Centigrade 0 25 50 75 100 125 150 (c) 2004 IXYS All rights reserved IXTK 82N25P IXTQ 82N25P IXTT 82N25P Fig. 7. Input Adm ittance 100 90 80 70 80 70 60 TJ = -40C 25C 125C Fig. 8. Transconductance ID - Amperes gfs - Siemens 6 6.5 7 7.5 8 60 50 40 30 20 10 0 4 4.5 5 5.5 TJ = 125C 25C -40C 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 180 V GS - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 240 10 9 200 8 7 VDS = 125V I D = 41A I G = 10mA ID - Amperes Fig. 10. Gate Charge IS - Amperes 160 VG S - Volts TJ = 125C TJ = 25C 0.3 0.5 0.7 0.9 1.1 1.3 1.5 6 5 4 3 2 1 120 80 40 0 0 V SD - Volts 0 15 30 45 60 75 90 105 120 135 150 QG - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area 1000 TJ = 150C R DS(on) Limit TC = 25C 100s 1ms 10ms 10 DC 25s Fig. 11. Capacitance 10000 f = 1MHz Capacitance - pF 1000 C oss C rss 100 0 5 10 15 1 20 25 30 35 40 10 100 1000 V DS - Volts ID - Amperes C iss 100 V DS - Volts 5,381,025 5,486,715 6,404,065B1 6,306,728B1 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXTK 82N25P IXTQ 82N25P IXTT 82N25P Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce 1.00 R(th)JC - (C/W) 0.10 0.01 1 10 1 00 1000 Puls e W idth - millis ec onds (c) 2004 IXYS All rights reserved |
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